M52S128168A-7.5TG ELITE SEMICONDUCTOR, M52S128168A-7.5TG Datasheet - Page 22

• Manufacturer Part Number: M52S128168A-7.5TG
• Description: IC, SDRAM, 128MBIT, 133MHZ, TSOP-54
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128168A-7.5TG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
*Note : 1. To prevent bus contention, there should be at least one gap between data in and data out.
5. Write Interrupted by Precharge & DQM
*Note : 1. To prevent bus contention, DQM should be issued which makes at least one gap between data in and data out.
Elite Semiconductor Memory Technology Inc.
2. To inhibit invalid write, DQM should be issued.
3. This precharge command and burst write command should be of the same bank, otherwise it is not precharge interrupt
( b ) C L = 3 , B L = 4
but only another bank precharge of four banks operation.
i i i ) C M D
i v ) C M D
i i ) C M D
v ) C M D
i ) C M D
C M D
C L K
D Q M
D Q
D Q M
D Q M
D Q M
D Q M
C L K
D Q M
D Q
D Q
D Q
D Q
D Q
W R
D 0
D 1
R D
R D
R D
R D
R D
D 2
W R
D 0
D 3
M a s k e d b y D Q M
* N o t e 2
* N o t e 3
W R
D 1
D 0
H i - Z
W R
Q0
D 2
D 1
D 0
* N o t e 1
H i - Z
W R
D 0
D 3
D 2
D 1
W R
D 0
D 3
D 2
D 1
D 1
D 3
D 2
D 3
D 2
D 3
Publication Date: Oct. 2007
Revision: 1.1
M52S128168A
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