M52S128168A-7.5TG ELITE SEMICONDUCTOR, M52S128168A-7.5TG Datasheet - Page 20

• Manufacturer Part Number: M52S128168A-7.5TG
• Description: IC, SDRAM, 128MBIT, 133MHZ, TSOP-54
• Manufacturer: ELITE SEMICONDUCTOR

Specifications of M52S128168A-7.5TG

• Memory Type: DRAM - Sychronous
• Memory Configuration: 2M X 16
• Ic Interface Type: Parallel
• Memory Case Style: TSOP
• No. Of Pins: 54
• Operating Temperature Range: 0°C To +70°C
• Frequency: 133MHz
• Filter Terminals: SMD
• Rohs Compliant: Yes
• Page Size: 128MB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ESMT
3. CAS Interrupt (I)
Elite Semiconductor Memory Technology Inc.
*Note : 1. By “interrupt” is meant to stop burst read/write by external before the end of burst.
D Q ( CL 2 )
DQ ( C L 3 )
1 ) R e a d i n t e r r u p t e d b y R e a d ( B L = 4 )
2 ) W r i t e i n t e r r u p t e d b y W r i t e ( B L = 2 )
CL K
C M D
C M D
A D D
A D D
C L K
D Q
2. t
3. t
By ” CAS interrupt ”, to stop burst read/write by CAS access; read and write.
CCD
CDL
: Last data in to new column address delay. (=1CLK)
: CAS to CAS delay. (=1CLK)
DA 0
W R
R D
A
A
t
* N o t e 2
t
t
* N o t e 3
C C D
C C D * N o t e 2
C D L
D B 0
W R
RD
B
B
Q A 0
DB 1
* N o t e 1
Q B 0
Q A 0
Q B 0
Q B 1
Q B 2
Q B 1
Q B 3
Q B 2
Q B 3
D Q ( CL 2 )
DQ ( C L 3 )
3 ) W r i t e i n t e r r u p t e d b y R e a d ( B L = 2 )
W R
D A 0
D A 0
A
t
t
* N o t e 3
C C D * N o t e 2
C D L
RD
B
Publication Date: Oct. 2007
Revision: 1.1
M52S128168A
DB 0
D B 0
D B 1
D B 1
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