DSPIC30F2020-20E/SO Microchip Technology, DSPIC30F2020-20E/SO Datasheet - Page 32

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DSPIC30F2020-20E/SO

Manufacturer Part Number
DSPIC30F2020-20E/SO
Description
IC, DSC, 16BIT, 12KB 40MHZ, 5.5V, SOIC28
Manufacturer
Microchip Technology
Series
DsPIC30Fr

Specifications of DSPIC30F2020-20E/SO

Core Frequency
40MHz
Core Supply Voltage
5.5V
Embedded Interface Type
I2C, SPI, UART
No. Of I/o's
20
Flash Memory Size
12KB
Supply Voltage Range
2.5V To 5.5V
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
21
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-SOIC (7.5mm Width)
Package
28SOIC W
Device Core
dsPIC
Family Name
dsPIC30
Maximum Speed
20 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16 Bit
Number Of Programmable I/os
21
Interface Type
I2C/SPI/UART
On-chip Adc
8-chx10-bit
Number Of Timers
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM300023 - KIT DEMO DSPICDEM SMPS BUCKDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F2020-20E/SO
Manufacturer:
SMSC
Quantity:
1 000
Part Number:
DSPIC30F2020-20E/SO
Manufacturer:
MICROCH
Quantity:
20 000
TABLE 11-5:
DS70284C-page 32
Step 6: Update the row address stored in NVMADRU:NVMADR. When W6 rolls over to 0x0, NVMADRU must be
0000
0000
0000
0000
Step 7: Reset device internal PC.
0000
0000
Step 8: Repeat Steps 3-7 until all rows of code memory are erased.
Step 9: Initialize NVMADR and NVMADRU to erase executive memory and initialize W7 for row address updates.
0000
0000
0000
0000
0000
Step 10: Set NVMCON to erase 1 row of executive memory.
0000
0000
Step 11: Unlock the NVMCON to erase 1 row of executive memory.
0000
0000
0000
0000
Step 12: Initiate the erase cycle.
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
Step 13: Update the row address stored in NVMADR.
0000
0000
Step 14: Reset device internal PC.
0000
0000
Step 15: Repeat Steps 10-14 until all 24 rows of executive memory are erased.
Command
(Binary)
incremented.
430307
AF0042
EC2764
883B16
040100
000000
EB0300
883B16
200807
883B27
200407
24071A
883B0A
200558
883B38
200AA9
883B39
A8E761
000000
000000
000000
000000
A9E761
000000
000000
000000
000000
430307
883B16
040100
000000
SERIAL INSTRUCTION EXECUTION FOR ROW ERASING PROGRAM MEMORY (CONTINUED)
(Hex)
Data
ADD
BTSC
INC
MOV
GOTO 0x100
NOP
CLR
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
MOV
BSET NVMCON, #WR
NOP
NOP
NOP
NOP
Externally time 'P19a' msec
Requirements”)
BCLR NVMCON, #WR
NOP
NOP
NOP
NOP
ADD
MOV
GOTO 0x100
NOP
W6, W7, W6
SR, #C
NVMADRU
W6, NVMADR
W6
W6, NVMADR
#0x80, W7
W7, NVMADRU
#0x40, W7
#0x4071, W10
W10, NVMCON
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
W6, W7, W6
W6, NVMADR
(see
Description
Section 13.0 “AC/DC Characteristics and Timing
© 2010 Microchip Technology Inc.

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