BFU790F,115 NXP Semiconductors, BFU790F,115 Datasheet - Page 51
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BFU790F,115
Manufacturer Part Number
BFU790F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU790F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Power - Max
234mW
Dc Current Gain (hfe) (min) @ Ic, Vce
235 @ 10mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
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Quick reference data CATV 1 GHz power doublers and push pulls
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Parameters
Power gain (dB)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2
Noise (@f
Total current consumption (mA)
Frequency range (MHz)
Parameters
Power gain (dB)
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2
Noise (@f
Total current consumption (mA)
Frequency range (MHz)
MAX
MAX
nd
) (dB)
nd
) (dB)
order distortion (dB)
order distortion (dB)
(N + 1)
typ.
typ.
typ.
typ.
max.
typ.
range
typ.
typ.
typ.
typ.
max.
typ.
range
CGD1040Hi
CGY1041
40 - 1003
40 - 1003
RF switch
440
250
-69
-68
-62
-62
1.5
1.5
5.5
21
22
6
PAD
CGD1042H
CGY1043
40 - 1003
40 - 1003
CATV 1-GHz push-pulls
450
250
-69
-68
-64
-64
1.5
1.5
5.5
23
24
6
EQ
CGD1042Hi
CATV 1- GHz power doublers
CGY1049*
40 - 1003
40 - 1003
440
250
-69
-68
-62
-64
1.5
4.5
23
30
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power
doubler. The CGD1046Hi will deliver, in one IC, a 26-dB power
gain with 60-dBmV output power and excellent ESD protection,
for the ultimate in high-quality, distortionless devices.
6
2
CGD1044H
CGY1032*
40 - 1003
40 - 1003
PAD
PAD
PAD
PAD
450
250
-69
-68
-62
-64
1.5
4.5
33
25
CGD104xHi
CGD104xHi
CGD104xHi
CGD104xHi
1
6
NXP Semiconductors RF Manual 14
CGD1044Hi
40 - 1003
440
-69
-68
1.5
25
6
H
H
H
H
L
L
L
L
CGD1046Hi*
40 - 1003
0.5 - 2.0
460
-68
-73
27
5
bra822
OUT
port 1
OUT
port 2
OUT
port 3
OUT
port 4
th
edition
53
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