BFU790F,115 NXP Semiconductors, BFU790F,115 Datasheet - Page 35

• Manufacturer Part Number: BFU790F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU790F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
• Power - Max: 234mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 235 @ 10mA, 2V
• Current - Collector (ic) (max): 100mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -

1.6.6 RF Plasma Lighting
Application diagram
Recommended products
* = check status at 3.1 new products, as this type has not been released yet for mass production.
Function
Function
MPA (medium
Product highlight:
NXP's 50 V high voltage LDMOS process enables highest power
at unprecedented ruggedness levels necessary for this kind of
application.
BLF578: 1000 W CW operation - highest power LDMOS
amplifier)
power
driver
final
final
final
final
final
final
oscillator
Type
BLF571
BLF573S
BLF574
BLF578
BLF645
BLF 278
BLF 177
Product
MMIC
CONTROLLER
MPA
108 - 225
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1000
0 - 1300
0 - 1300
28 - 108
SiGe:C MMIC
(MHz)
f
range
MMIC
HPA
1200
1000
300
400
100
100
250
150
20
P
W
L
Package
SOT89
SOT908
SOT89
SOT908
SOT89
SOT908
RF (plasma) bulb
26.5
27.5
27.2
G
dB
24
24
18
17
16
19
p
brb436
Mode of operation
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; 2-TONE; CW
1-TONE; PULSED RF
1-TONE; CW
2-TONE
CW
class AB
class B
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130*
BGA7133*
Features
`
`
`
`
`
Highest power device
Unprecedented ruggedness
Low-thermal resistance design for very reliable operation
Very consistent device performance
Broadband device for flexible use
NXP Semiconductors RF Manual 14
th
edition
37