BFU790F,115 NXP Semiconductors, BFU790F,115 Datasheet - Page 3
BFU790F,115
Manufacturer Part Number
BFU790F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G10L-40BRN118.pdf
(110 pages)
Specifications of BFU790F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
2.8V
Frequency - Transition
25GHz
Noise Figure (db Typ @ F)
0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
Power - Max
234mW
Dc Current Gain (hfe) (min) @ Ic, Vce
235 @ 10mA, 2V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
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NXP’s firsts in RF
1963 – First transistors and diodes on 0.75 inch wafers
1964 – First RF wideband transistor with 1.5 GHz max
1970 – BFR90, a 5 GHz RF wideband transistor
1978 – BFQ33, a 14 GHz RF wideband transistor
1989 – Output matching in common emitter base station transistors
1992 – Highest power broadcast bipolar devices
1996 – Highest performance 2 GHz LDMOS
2004 – Gen5 LDMOS which becomes the industry’s most advanced process for power amplifiers
2006 – Fully integrated Doherty transistors
2007 – Industry’s first fully integrated, silicon-based IC solution for satellite: TFF1004HN
2008 – High speed data converters based on JESD204A standard
2009 – 1kW single transistor (BLF578) power amplifier for FM radio (88 to 108 MHz)
2009 – State-of-the-art, next generation SiGe:C BiCMOS QUBiC4Xi technology
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and I’m convinced that you’ll find the 14
edition even more useful in your daily design work.”
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Business Line High Performance RF
RF Manual web page
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