BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet - Page 7

• Manufacturer Part Number: BFU660F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU660F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
• Gain: 12dB ~ 21dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 10mA, 2V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 30 mA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BFU660F
Product data sheet
Fig 7.
Fig 9.
NF
(dB)
(dB)
G
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(4) f = 1.5 GHz
min
40
30
20
10
0
3
2
1
0
0
V
0
V
Minimum noise figure as a function of
collector current; typical values
Gain as a function of frequency; typical values
CE
CE
= 1 V; I
= 2 V; T
|S21|
MSG
2
5
2
C
amb
= 5 mA; T
= 25 °C.
10
4
amb
15
6
= 25 °C.
G
p(max)
20
All information provided in this document is subject to legal disclaimers.
8
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001aam830
(1)
(2)
(3)
(4)
I
f (GHz)
C
(mA)
Rev. 1 — 11 January 2011
10
25
Fig 8.
Fig 10. Minimum noise figure as a function of
NF
(dB)
(dB)
G
min
2.0
1.5
1.0
0.5
40
30
20
10
0
0
0
0
V
Gain as a function of frequency; typical values
V
frequency; typical values
CE
CE
|S21|
= 1 V; I
= 2 V; I
2
MSG
2
NPN wideband silicon RF transistor
2
C
C
= 30 mA; T
= 6 mA; T
4
G
p(max)
4
amb
amb
6
= 25 °C.
= 25 °C.
BFU660F
6
© NXP B.V. 2011. All rights reserved.
8
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001aam831
f (GHz)
f (GHz)
10
8
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