BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet - Page 6

• Manufacturer Part Number: BFU660F,115
• Description: TRANSISTOR NPN SOT343F
• Manufacturer: NXP Semiconductors

Specifications of BFU660F,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5.5V
• Frequency - Transition: 21GHz
• Noise Figure (db Typ @ F): 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
• Gain: 12dB ~ 21dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 90 @ 10mA, 2V
• Current - Collector (ic) (max): 60mA
• Mounting Type: Surface Mount
• Package / Case: SOT-343F
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5.5 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 30 mA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 90
• Gain Bandwidth Product Ft: 21 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BFU660F
Product data sheet
Fig 4.
Fig 6.
C
(fF)
CBS
(1) f = 1.5 GHz
(2) f = 1.8 GHz
(3) f = 2.4 GHz
(4) f = 5.8 GHz
(5) f = 12 GHz
200
160
120
80
40
0
0
f = 1 MHz, T
collector-base voltage; typical values
V
Gain as a function of collector current; typical value
Collector-base capacitance as a function of
CE
= 1 V; T
amb
amb
4
= 25 °C.
= 25 °C.
(dB)
8
G
30
20
10
0
V
0
All information provided in this document is subject to legal disclaimers.
CB
001aam825
(V)
MSG
20
Rev. 1 — 11 January 2011
12
(1)
(2)
(3)
(4)
40
Fig 5.
60
(GHz)
G
fT
p(max)
25
20
15
10
5
0
0
V
Transition frequency as a function of collector
current; typical values
80
CE
001aam827
I
C
= 1 V; f = 2 GHz; T
(mA)
20
100
NPN wideband silicon RF transistor
40
amb
60
= 25 °C.
BFU660F
© NXP B.V. 2011. All rights reserved.
80
001aam826
I
C
(mA)
100
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