BFU660F,115 NXP Semiconductors, BFU660F,115 Datasheet - Page 3
![TRANSISTOR NPN SOT343F](/photos/16/0/160096/sot343_sml.jpg)
BFU660F,115
Manufacturer Part Number
BFU660F,115
Description
TRANSISTOR NPN SOT343F
Manufacturer
NXP Semiconductors
Datasheet
1.BFU660F115.pdf
(12 pages)
Specifications of BFU660F,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Frequency - Transition
21GHz
Noise Figure (db Typ @ F)
0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
Gain
12dB ~ 21dB
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
90 @ 10mA, 2V
Current - Collector (ic) (max)
60mA
Mounting Type
Surface Mount
Package / Case
SOT-343F
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
5.5 V
Emitter- Base Voltage Vebo
2.5 V
Continuous Collector Current
30 mA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
90
Gain Bandwidth Product Ft
21 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
4. Marking
5. Limiting values
6. Thermal characteristics
BFU660F
Product data sheet
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
Type number
BFU660F
Symbol
V
V
V
I
P
T
T
Symbol
R
C
Fig 1.
stg
j
CBO
CEO
EBO
tot
th(j-sp)
T
sp
is the temperature at the solder point of the emitter lead.
Power derating curve
Parameter
thermal resistance from junction to solder point
Marking
Limiting values
Thermal characteristics
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
All information provided in this document is subject to legal disclaimers.
(mW)
P
Rev. 1 — 11 January 2011
tot
300
250
200
150
100
50
0
0
Marking
D3*
40
Conditions
open emitter
open base
open collector
T
sp
≤ 90 °C
80
NPN wideband silicon RF transistor
120
T
001aam822
[1]
sp
(°C)
Min
-
-
-
-
-
−65
-
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
160
Conditions
Max
16
5.5
2.5
60
225
+150
150
BFU660F
© NXP B.V. 2011. All rights reserved.
Typ
270
Unit
V
V
V
mA
°C
°C
mW
Unit
K/W
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