BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 7
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BFR94AW,115
Manufacturer Part Number
BFR94AW,115
Description
TRANS NPN 5GHZ SC-70
Manufacturer
NXP Semiconductors
Datasheet
1.BFR94AW115.pdf
(15 pages)
Specifications of BFR94AW,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
65
Gain Bandwidth Product Ft
5 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFR94AW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BFR94AW
Product data sheet
Fig 12. Common emitter noise figure circles; typical values
(1) Γ
(2) NF = 2.5 dB
(3) NF = 3 dB
(4) NF = 4 dB
(5) Γ
(6) G = 15 dB
(7) G = 14 dB
(8) G = 13 dB
f = 1 GHz; V
opt
ms
; NF
; G
max
min
= 15.7 dB
= 2.1 dB
CE
= 10 V; I
180°
C
= 5 mA; Z
0
−135°
+0.2
−0.2
135°
(5)
O
(6)
All information provided in this document is subject to legal disclaimers.
= 50 Ω.
0.2
+0.5
−0.5
(7)
(8)
Rev. 1 — 29 October 2010
0.5
−90°
+1
−1
90°
1
(1)
2
(2)
(3)
+2
−2
(4)
5
−45°
45°
10
001aam913
+5
−5
NPN 5 GHz wideband transistor
0°
1.0
0.8
0.6
0.4
0.2
0
1.0
BFR94AW
© NXP B.V. 2010. All rights reserved.
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