BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 6
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BFR94AW,115
Manufacturer Part Number
BFR94AW,115
Description
TRANS NPN 5GHZ SC-70
Manufacturer
NXP Semiconductors
Datasheet
1.BFR94AW115.pdf
(15 pages)
Specifications of BFR94AW,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
65
Gain Bandwidth Product Ft
5 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFR94AW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BFR94AW
Product data sheet
Fig 9.
Fig 11. Common emitter noise figure circles; typical values
(dB)
NF
6
4
2
0
1
V
Minimum noise figure as a function of
collector current; typical values
f = 500 MHz; V
CE
= 10 V.
CE
= 10 V; I
10
180°
f = 2 GHz
C
= 5 mA; Z
0
1 GHz
500 MHz
−135°
I
C
+0.2
−0.2
135°
(mA)
All information provided in this document is subject to legal disclaimers.
001aam910
0.2
O
= 50 Ω.
+0.5
−0.5
10
Rev. 1 — 29 October 2010
2
0.5
−90°
+1
−1
90°
1
NF = 4 dB
Fig 10. Minimum noise figure as a function of
NF = 3 dB
NF
NF = 2 dB
(dB)
NF
min
2
6
4
2
0
10
= 1.6 dB
V
frequency; typical values
2
CE
Γ
opt
+2
−2
= 10 V.
5
−45°
45°
10
001aam912
+5
−5
NPN 5 GHz wideband transistor
0°
10
3
I
C
1.0
0.8
0.6
0.4
0.2
0
1.0
= 15 mA
10 mA
BFR94AW
f (MHz)
5 mA
© NXP B.V. 2010. All rights reserved.
001aam911
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