BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 6

• Manufacturer Part Number: BFR94AW,115
• Description: TRANS NPN 5GHZ SC-70
• Manufacturer: NXP Semiconductors

Specifications of BFR94AW,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BFR94AW
Product data sheet
Fig 9.
Fig 11. Common emitter noise figure circles; typical values
(dB)
NF
6
4
2
0
1
V
Minimum noise figure as a function of
collector current; typical values
f = 500 MHz; V
CE
= 10 V.
CE
= 10 V; I
10
180°
f = 2 GHz
C
= 5 mA; Z
0
1 GHz
500 MHz
−135°
I
C
+0.2
−0.2
135°
(mA)
All information provided in this document is subject to legal disclaimers.
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0.2
O
= 50 Ω.
+0.5
−0.5
10
Rev. 1 — 29 October 2010
2
0.5
−90°
+1
−1
90°
1
NF = 4 dB
Fig 10. Minimum noise figure as a function of
NF = 3 dB
NF
NF = 2 dB
(dB)
NF
min
2
6
4
2
0
10
= 1.6 dB
V
frequency; typical values
2
CE
Γ
opt
+2
−2
= 10 V.
5
−45°
45°
10
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+5
−5
NPN 5 GHz wideband transistor
0°
10
3
I
C
1.0
0.8
0.6
0.4
0.2
0
1.0
= 15 mA
10 mA
BFR94AW
f (MHz)
5 mA
© NXP B.V. 2010. All rights reserved.
001aam911
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