BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 3

• Manufacturer Part Number: BFR94AW,115
• Description: TRANS NPN 5GHZ SC-70
• Manufacturer: NXP Semiconductors

Specifications of BFR94AW,115

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2dB ~ 3dB @ 1GHz ~ 2GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 65 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 25 mA
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 65
• Gain Bandwidth Product Ft: 5 GHz
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 7.
[1]
BFR94AW
Product data sheet
Symbol
I
h
C
C
C
f
G
NF
CBO
T
FE
c
e
re
UM
G
G
UM
UM
is the maximum unilateral power gain, assuming S
=
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
unilateral power gain
noise figure
10
log
------------------------------------------------------- - dB.
(
1
–
S
Table 6.
[1]
Symbol
R
11
th(j-sp)
2
S
) 1
21
T
(
sp
2
–
is the temperature at the solder point of the collector pin.
S
22
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
2
)
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
I
I
T
I
I
I
E
C
E
C
C
C
C
C
amb
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
= 0 A; V
= i
= 15 mA; V
= i
= 0 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
Rev. 1 — 29 October 2010
e
c
= 25 °C
12
= 0 A; V
= 0 A; V
is zero and
CB
CE
CE
= 10 V
CE
CE
CE
CB
EB
= 10 V; f = 1 MHz;
= 10 V; Γ
= 10 V; T
= 10 V
= 10 V; f = 500 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
S
amb
Conditions
T
= Γ
sp
opt
= 25 °C
≤ 93 °C
NPN 5 GHz wideband transistor
[1]
Min
-
65
-
-
-
3.5
-
-
-
-
Typ
-
90
0.6
0.9
0.35
5
14
8
2
3
BFR94AW
© NXP B.V. 2010. All rights reserved.
[1]
Typ
190
Max
50
135
-
-
-
-
-
-
-
-
Unit
K/W
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
dB
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