BFR94AW,115 NXP Semiconductors, BFR94AW,115 Datasheet - Page 3
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BFR94AW,115
Manufacturer Part Number
BFR94AW,115
Description
TRANS NPN 5GHZ SC-70
Manufacturer
NXP Semiconductors
Datasheet
1.BFR94AW115.pdf
(15 pages)
Specifications of BFR94AW,115
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
5GHz
Noise Figure (db Typ @ F)
2dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
65 @ 15mA, 10V
Current - Collector (ic) (max)
25mA
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
25 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
65
Gain Bandwidth Product Ft
5 GHz
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BFR94AW,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 7.
[1]
BFR94AW
Product data sheet
Symbol
I
h
C
C
C
f
G
NF
CBO
T
FE
c
e
re
UM
G
G
UM
UM
is the maximum unilateral power gain, assuming S
=
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
unilateral power gain
noise figure
10
log
------------------------------------------------------- - dB.
(
1
–
S
Table 6.
[1]
Symbol
R
11
th(j-sp)
2
S
) 1
21
T
(
sp
2
–
is the temperature at the solder point of the collector pin.
S
22
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
2
)
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
I
I
I
T
I
I
I
E
C
E
C
C
C
C
C
amb
f = 1 GHz
f = 2 GHz
f = 1 GHz
f = 2 GHz
= 0 A; V
= i
= 15 mA; V
= i
= 0 mA; V
= 15 mA; V
= 15 mA; V
= 5 mA; V
Rev. 1 — 29 October 2010
e
c
= 25 °C
12
= 0 A; V
= 0 A; V
is zero and
CB
CE
CE
= 10 V
CE
CE
CE
CB
EB
= 10 V; f = 1 MHz;
= 10 V; Γ
= 10 V; T
= 10 V
= 10 V; f = 500 MHz
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
S
amb
Conditions
T
= Γ
sp
opt
= 25 °C
≤ 93 °C
NPN 5 GHz wideband transistor
[1]
Min
-
65
-
-
-
3.5
-
-
-
-
Typ
-
90
0.6
0.9
0.35
5
14
8
2
3
BFR94AW
© NXP B.V. 2010. All rights reserved.
[1]
Typ
190
Max
50
135
-
-
-
-
-
-
-
-
Unit
K/W
Unit
nA
pF
pF
pF
GHz
dB
dB
dB
dB
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