BFG25AW/X,115 NXP Semiconductors, BFG25AW/X,115 Datasheet - Page 8

• Manufacturer Part Number: BFG25AW/X,115
• Description: TRANS RF NPN 5GHZ 5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG25AW/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2dB @1GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6185-2; BFG25AW/X,115

NXP Semiconductors
1998 Sep 23
handbook, full pagewidth
handbook, full pagewidth
NPN 5 GHz wideband transistors
V
V
CE
CE
= 1 V; I
= 1 V; I
C
C
= 1 mA; Z
= 1 mA.
o
Fig.16 Common emitter forward transmission coefficient (S
= 50 .
Fig.15 Common emitter input reflection coefficient (S
180
180
o
o
5
0
135
135
135
135
0.2
0.2
4
o
o
o
o
0.2
3
40 MHz
0.5
0.5
2
0.5
1
3 GHz
8
90
90
90
90
1
1
1
o
o
o
o
3 GHz
2
2
2
5
40 MHz
11
); typical values.
BFG25AW; BFG25AW/X
45
45
45
45
21
o
o
o
o
5
5
); typical values.
MLB981
MLB980
0
0
o
o
1.0
0.8
0.6
0.4
0.2
0
1.0
Product specification