BFG25AW/X,115 NXP Semiconductors, BFG25AW/X,115 Datasheet - Page 6

• Manufacturer Part Number: BFG25AW/X,115
• Description: TRANS RF NPN 5GHZ 5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG25AW/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2dB @1GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6185-2; BFG25AW/X,115

NXP Semiconductors
1998 Sep 23
handbook, halfpage
handbook, full pagewidth
NPN 5 GHz wideband transistors
V
f = 500 MHz; V
CE
(dB)
= 1 V.
F
Fig.10 Minimum noise figure as a function
4
3
2
1
0
10
−1
CE
of collector current; typical values.
= 1 V; I
C
= 1 mA; Z
1
180
Fig.12 Common emitter noise figure circles; typical values.
o
= 50 
o
1 GHz
500 MHz
f = 2 GHz
I C (mA)
0
135
135
0.2
0.2
o
o
0.2
MCD145
0.5
0.5
10
0.5
6
90
90
1
1
1
o
o
handbook, halfpage
V
F = 5 dB
CE
(dB)
= 1 V.
Fig.11 Minimum noise figure as a function of
F
2
F = 4 dB
4
3
2
1
0
10
F
2
min
F = 3 dB
2
2
frequency; typical values.
= 1.9 dB
5
BFG25AW; BFG25AW/X
45
Γ
45
opt
o
o
5
5
MLB977
0
o
10
3
1.0
0.8
0.6
0.4
0.2
0
1.0
I C = 2 mA
1 mA
0.5 mA
f (MHz)
Product specification
MCD146
10
4