BFG25AW/X,115 NXP Semiconductors, BFG25AW/X,115 Datasheet - Page 5

• Manufacturer Part Number: BFG25AW/X,115
• Description: TRANS RF NPN 5GHZ 5V SOT343
• Manufacturer: NXP Semiconductors

Specifications of BFG25AW/X,115

• Package / Case: SOT-343N
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 1.9dB ~ 2dB @1GHz
• Power - Max: 500mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 500µA, 1V
• Current - Collector (ic) (max): 6.5mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 50
• Dc Current Gain Hfe Max: 200
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 5 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 6.5 mA
• Power Dissipation: 500 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-6185-2; BFG25AW/X,115

NXP Semiconductors
1998 Sep 23
handbook, halfpage
handbook, halfpage
NPN 5 GHz wideband transistors
f = 500 MHz; V
I
C
gain
(dB)
gain
(dB)
= 0.5 mA; V
Fig.6
50
30
20
10
40
30
20
10
0
0
Fig.8
10
0
G UM
MSG
CE
Gain as a function of collector current;
typical values.
CE
= 1 V.
= 1 V.
Gain as a function of frequency;
typical values.
10
1
2
10
2
3
G UM
MSG
I
f (MHz)
C
(mA)
MLB973
MLB975
10
3
4
5
handbook, halfpage
handbook, halfpage
f = 1 GHz; V
I
C
gain
(dB)
gain
(dB)
= 1 mA; V
Fig.7
30
20
10
50
40
30
20
10
0
0
Fig.9
10
0
CE
CE
G UM
MSG
Gain as a function of collector current;
typical values.
= 1 V.
= 1 V.
typical values.
Gain as a function of frequency;
BFG25AW; BFG25AW/X
10
1
2
10
2
G UM
MSG
3
Product specification
I
f (MHz)
C
(mA)
MLB974
MLB976
10
3
4