BFR93A,235 NXP Semiconductors, BFR93A,235 Datasheet - Page 2
BFR93A,235
Manufacturer Part Number
BFR93A,235
Description
TRANS NPN 12V 35MA 6GHZ SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR93A215.pdf
(13 pages)
Specifications of BFR93A,235
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
6GHz
Noise Figure (db Typ @ F)
1.9dB ~ 3dB @ 1GHz ~ 2GHz
Power - Max
300mW
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 30mA, 5V
Current - Collector (ic) (max)
35mA
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
40
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
2 V
Continuous Collector Current
35 mA
Power Dissipation
300 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
NXP Semiconductors
FEATURES
High power gain
Low noise figure
Very low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. T
1997 Oct 29
V
V
I
P
C
f
G
F
V
V
V
V
I
P
T
T
SYMBOL
SYMBOL
C
T
C
oscillators.
stg
j
CBO
CEO
tot
O
CBO
CEO
EBO
tot
NPN 6 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector pin.
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
maximum unilateral power gain I
noise figure
output voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
PARAMETER
PARAMETER
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
1
2
3
open emitter
open base
T
I
I
I
I
T
d
R
f
open emitter
open base
open collector
T
C
C
C
C
C
p
im
s
amb
s
L
+ f
= 0; V
= 30 mA; V
= 30 mA; V
= 30 mA; V
= 5 mA; V
95 C
95 C; note 1
= 75 ; T
= 60 dB; I
q
= 25 C
base
emitter
collector
f
CE
r
= 793.25 MHz
DESCRIPTION
= 5 V; f = 1 MHz
CE
amb
2
CE
CE
CE
C
= 8 V; f = 1 GHz;
CONDITIONS
CONDITIONS
= 30 mA; V
= 25 C;
= 5 V; f = 500 MHz
= 8 V; f = 1 GHz; T
= 8 V; f = 2 GHz; T
CE
= 8 V;
s
lfpage
amb
amb
=
Marking code: R2p.
opt
= 25 C 13
= 25 C 7
;
Top view
1
Fig.1 SOT23.
0.6
6
1.9
425
65
TYP.
MIN.
Product specification
3
15
12
35
300
15
12
2
35
300
+150
+175
BFR93A
MSB003
MAX.
MAX.
2
V
V
mA
mW
pF
GHz
dB
dB
dB
mV
V
V
V
mA
mW
C
C
UNIT
UNIT