BLF888AS,112 NXP Semiconductors, BLF888AS,112 Datasheet - Page 8

• Manufacturer Part Number: BLF888AS,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888AS,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF888A_BLF888AS
Preliminary data sheet
7.4 Reliability
Fig 9.
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
BLF888A; BLF888AS electromigration (I
1
7
6
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
0
= 100 °C
= 110 °C
= 120 °C
= 130 °C
= 140 °C
= 150 °C
= 160 °C
= 170 °C
= 180 °C
= 190 °C
= 200 °C
(10)
(11)
(7)
(8)
(9)
All information provided in this document is subject to legal disclaimers.
2
Rev. 2 — 1 March 2011
4
6
8
(1)
(2)
(3)
(4)
(5)
(6)
10
BLF888A; BLF888AS
DS(DC)
12
, total device)
14
UHF power LDMOS transistor
16
18
I
001aam586
DS(DC)
© NXP B.V. 2011. All rights reserved.
(A)
20
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