BLF888AS,112 NXP Semiconductors, BLF888AS,112 Datasheet - Page 4

• Manufacturer Part Number: BLF888AS,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888AS,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF888A_BLF888AS
Preliminary data sheet
6.1 Ruggedness in class-AB operation
Table 7.
RF characteristics in NXP production narrowband test circuit; T
specified.
[1]
[2]
[3]
The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding
to VSWR ≥ 40 : 1 through all phases under the following conditions: V
f = 860 MHz at rated power.
Symbol
DVB-T (8k OFDM), class-AB
V
I
P
G
η
IMD
PAR
Dq
Fig 1.
D
DS
L(AV)
p
I
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
shldr
Dq
for total device.
V
Output capacitance as a function of drain-source voltage; typical values per
section
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
intermodulation distortion shoulder
peak-to-average ratio
GS
RF characteristics
= 0 V; f = 1 MHz.
All information provided in this document is subject to legal disclaimers.
C
(pF)
oss
400
300
200
100
Rev. 2 — 1 March 2011
0
0
…continued
20
BLF888A; BLF888AS
Conditions
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
f = 858 MHz
40
V
DS
001aam579
case
(V)
UHF power LDMOS transistor
= 25
60
[1]
[2]
[3]
°
C unless otherwise
Min Typ Max Unit
-
-
110
20
28
-
-
DS
© NXP B.V. 2011. All rights reserved.
50
1.3
-
21
31
−32 −28
8.2
= 50 V;
-
-
-
-
-
-
4 of 17
V
W
dB
%
A
dBc
dB