BLF888AS,112 NXP Semiconductors, BLF888AS,112 Datasheet - Page 12

• Manufacturer Part Number: BLF888AS,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888AS,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
9. Package outline
Fig 13. Package outline SOT539A
BLF888A_BLF888AS
Preliminary data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
inches
UNIT
mm
OUTLINE
VERSION
SOT539A
H
0.185
0.165
4.7
4.2
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.007
0.004
0.18
0.10
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
All information provided in this document is subject to legal disclaimers.
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
0.375
0.365
9.53
9.27
E 1
Rev. 2 — 1 March 2011
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.137
0.117
3.48
2.97
w 2
w 3
5
L
BLF888A; BLF888AS
M
M
C
0.130
0.120
3.30
3.05
C
p
p
F
M
B
0.089
0.079
2.26
2.01
Q
w 1
M
35.56
1.400
UHF power LDMOS transistor
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
M
10.29
10.03
0.405
0.395
E 1
U 2
c
© NXP B.V. 2011. All rights reserved.
0.010 0.020
0.25
Q
w 1
ISSUE DATE
00-03-03
10-02-02
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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