BLF888A,112 NXP Semiconductors, BLF888A,112 Datasheet - Page 7

• Manufacturer Part Number: BLF888A,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888A,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF888A_BLF888AS
Preliminary data sheet
7.3 Impedance information
Table 8.
Simulated Z
f
MHz
300
325
350
375
400
425
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
925
950
975
1000
Fig 8.
Definition of transistor impedance
Typical push-pull impedance
i
and Z
All information provided in this document is subject to legal disclaimers.
L
device impedance; impedance info at V
Rev. 2 — 1 March 2011
Z
Ω
0.617 − j1.715
0.635 − j1.355
0.655 − j1.026
0.677 − j0.721
0.702 − j0.435
0.731 − j0.164
0.762 + j0.096
0.798 + j0.347
0.839 + j0.592
0.884 + j0.833
0.936 + j1.072
0.995 + j1.310
1.063 + j1.549
1.141 + j1.791
1.230 + j2.037
1.334 + j2.289
1.456 + j2.548
1.599 + j2.814
1.768 + j3.090
1.971 + j3.376
2.214 + j3.671
2.510 + j3.975
2.873 + j4.282
3.320 + j4.584
3.875 + j4.865
4.562 + j5.095
5.409 + j5.223
6.426 + j5.166
7.587 + j4.807
i
gate 1
Z
gate 2
i
BLF888A; BLF888AS
drain 1
drain 2
001aan207
Z
L
DS
= 50 V and P
UHF power LDMOS transistor
Z
Ω
4.989 + j1.365
4.867 + j1.424
4.741 + j1.472
4.614 + j1.511
4.486 + j1.540
4.357 + j1.559
4.228 + j1.570
4.100 + j1.573
4.974 + j1.567
3.850 + j1.554
3.728 + j1.534
3.608 + j1.508
3.492 + j1.475
3.378 + j1.437
3.268 + j1.394
3.161 + j1.347
3.057 + j1.295
2.957 + j1.239
2.860 + j1.180
2.676 + j1.118
2.677 + j1.053
2.591 + j0.985
2.508 + j0.915
2.428 + j0.843
2.351 + j0.770
2.277 + j0.695
2.206 + j0.618
2.138 + j0.540
2.073 + j0.461
L
L(AV)
© NXP B.V. 2011. All rights reserved.
= 110 W (DVB-T).
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