BLF888A,112 NXP Semiconductors, BLF888A,112 Datasheet - Page 14

• Manufacturer Part Number: BLF888A,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888A,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
10. Handling information
11. Abbreviations
12. Revision history
Table 11.
BLF888A_BLF888AS
Preliminary data sheet
CAUTION
Document ID
BLF888A_BLF888AS v.2
Modifications:
BLF888A_BLF888AS v.1
Revision history
Table 10.
Acronym
CCDF
DVB
DVB-T
LDMOS
LDMOST
OFDM
PAR
RF
SMD
UHF
VSWR
Release date
20110301
20100921
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This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Section 1.2 on page
Section named “Quick reference data” has been removed
Table 6 on page
Table 6 on page
Table 7 on page
Figure 6 on page 6
Figure 8 on page
Table 8 on page
Table 8 on page
Section 7.1.1 on page
Table 9 on page
Figure 10 on page
Figure 12 on page
Section 10 on page
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Preliminary data sheet
Objective data sheet
3: the description of the table has been changed
3: the specification about g
3: the conditions in the “2-tone, class-AB” part have been changed
7: the description of the table has been changed
7: values have been changed
9: C23 and C24 have been added
7: the figure has been changed
Rev. 2 — 1 March 2011
10: C23 and C24 have been added
11: C23 and C24 have been added
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Ultra High Frequency
Voltage Standing-Wave Ratio
and
14: section has been added
1: Line about thermal behavior has been changed
5: the graphs have been changed
Figure 7 on page 6
Change notice
-
-
BLF888A; BLF888AS
fs
have swapped places
has been removed
UHF power LDMOS transistor
Supersedes
BLF888A_BLF888AS v.1
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© NXP B.V. 2011. All rights reserved.
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