BLF888A,112 NXP Semiconductors, BLF888A,112 Datasheet - Page 3

• Manufacturer Part Number: BLF888A,112
• Description: TRANS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF888A,112

• Voltage - Rated: 110V
• Transistor Type: LDMOS (Dual)
• Frequency: 860MHz
• Gain: 21dB
• Current Rating: 36A
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLF888A_BLF888AS
Preliminary data sheet
Table 5.
[1]
Table 6.
T
[1]
[2]
Table 7.
RF characteristics in NXP production narrowband test circuit; T
specified.
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
R
C
C
C
Symbol
2-Tone, class-AB
V
I
P
G
η
IMD3
DSS
DSX
GSS
Dq
j
D
(BR)DSS
GS(th)
DS
L(AV)
th(j-c)
DS(on)
iss
oss
rss
p
= 25
R
I
Capacitance values without internal matching.
D
th(j-c)
is the drain current.
°
C; per section unless otherwise specified.
is measured under RF conditions.
thermal resistance from junction to case T
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
drain-source on-state resistance
input capacitance
output capacitance
reverse transfer capacitance
Parameter
drain-source voltage
quiescent drain current
average output power
power gain
drain efficiency
third-order intermodulation distortion
Thermal characteristics
DC characteristics
RF characteristics
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2011
Conditions
V
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
GS
= 8.5 A
BLF888A; BLF888AS
= 10 V; I
= 10 V
= 0 V; I
= 0 V; V
= V
= 10 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
Conditions
f
f
f
f
f
f
f
f
f
f
f
f
Conditions
1
2
1
2
1
2
1
2
1
2
1
2
GS(th)
GS(th)
case
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
= 860 MHz;
= 860.1 MHz
D
= 80 °C; P
DS
DS
DS
DS
D
= 2.4 mA
+ 3.75 V;
+ 3.75 V;
DS
= 240 mA
= 50 V
= 50 V;
= 50 V;
= 50 V;
= 0 V
case
UHF power LDMOS transistor
= 25
L(AV)
[1]
°
[1]
[1]
[1]
[2]
C unless otherwise
= 125 W
Min Typ Max Unit
-
-
250 -
20
42
-
Min Typ Max Unit
110 -
1.4
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
50
1.3
21
46
−32 −28
1.9
-
36
-
143 -
220 -
74
1.2
[1]
-
-
-
-
-
Typ Unit
0.15 K/W
-
2.4
2.8
-
280
-
-
3 of 17
V
W
dB
%
A
dBc
V
V
μA
A
nA
mΩ
pF
pF
pF