BLF6G13L-250P,112 NXP Semiconductors, BLF6G13L-250P,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G13L-250P,112
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G13L-250P,112

• Voltage - Rated: 100V
• Transistor Type: LDMOS (Dual)
• Frequency: 1.3GHz
• Gain: 15dB
• Current Rating: 42A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 100V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 15@50VdB
• Package Type: CDFM
• Pin Count: 5
• Drain Source Resistance (max): 340@6Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLF6G13L-250P_6G13LS-250P
Objective data sheet
6.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: CW; f = 1.3 GHz; RF performance at V
unless otherwise specified, in a class-AB production test circuit.
The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
Symbol
R
Symbol Parameter
V
I
I
g
Symbol
V
V
I
R
P
G
RL

DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L
DS
th(j-c)
DS(on)
p
= 25
in

C; per section unless otherwise specified.
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Parameter
thermal resistance from junction to case T
Thermal characteristics
DC characteristics
RF characteristics
Parameter
output power
drain-source voltage
power gain
input return loss
drain efficiency
DS
BLF6G13L-250P; BLF6G13LS-250P
All information provided in this document is subject to legal disclaimers.
= 50 V; I
Rev. 2 — 21 March 2011
Dq
= 100 mA; P
L
Conditions
V
V
V
V
V
V
I
D
= 250 W; f = 1.3 GHz.
GS
DS
GS
GS
DS
GS
DS
GS
= 4.75 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
case
D
DS
D
D
DS
Conditions
P
P
P
P
= 1.4 mA
+ 3.75 V;
+ 3.75 V;
DS
= 85 C; P
= 235 mA
= 120 mA
L
L
L
L
= 50 V
= 50 V; I
= 250 W
= 250 W
= 250 W
= 250 W
= 0 V
L
Dq
Power LDMOS transistor
= 250 W
= 100 mA; T
Min
100
1.3
-
16
-
-
-
Min Typ Max Unit
250 -
-
15
-
53
© NXP B.V. 2011. All rights reserved.
Typ
-
1.8
-
21
-
1
200
17
56
-
30 20
case
Typ
0.26
-
50
-
-
Max Unit
-
2.25 V
0.7
-
70
-
340 m
= 25
3 of 13
Unit
K/W
W
V
dB
dB
%
V
A
A
nA
S

C;