BLF6G13L-250P,112 NXP Semiconductors, BLF6G13L-250P,112 Datasheet - Page 13

• Manufacturer Part Number: BLF6G13L-250P,112
• Description: TRANS LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G13L-250P,112

• Voltage - Rated: 100V
• Transistor Type: LDMOS (Dual)
• Frequency: 1.3GHz
• Gain: 15dB
• Current Rating: 42A
• Current - Test: 100mA
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 42A
• Drain Source Voltage (max): 100V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 15@50VdB
• Package Type: CDFM
• Pin Count: 5
• Drain Source Resistance (max): 340@6Vmohm
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 50%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Handling information. . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Ruggedness in class-AB operation . . . . . . . . . 3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-Carrier CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 5
Circuit information. . . . . . . . . . . . . . . . . . . . . . . 6
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
BLF6G13L-250P; BLF6G13LS-250P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Document identifier: BLF6G13L-250P_6G13LS-250P
Power LDMOS transistor
Date of release: 21 March 2011
All rights reserved.