BLF6G13L-250P,112 NXP Semiconductors, BLF6G13L-250P,112 Datasheet

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BLF6G13L-250P,112

Manufacturer Part Number
BLF6G13L-250P,112
Description
TRANS LDMOS SOT1121A
Manufacturer
NXP Semiconductors
Datasheets
1.BLF6G13L-250P112.pdf (13 pages)
2.BLF6G13L-250P112.pdf (9 pages)

Specifications of BLF6G13L-250P,112

Voltage - Rated
100V
Transistor Type
LDMOS (Dual)
Frequency
1.3GHz
Gain
15dB
Current Rating
42A
Current - Test
100mA
Voltage - Test
50V
Power - Output
250W
Package / Case
*
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
42A
Drain Source Voltage (max)
100V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
15@50VdB
Package Type
CDFM
Pin Count
5
Drain Source Resistance (max)
340@6Vmohm
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
50%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz.
Table 1.
Typical RF performance at T
Mode of operation
CW
BLF6G13L-250P;
BLF6G13LS-250P
Power LDMOS transistor
Rev. 1 — 2 November 2010
Typical CW performance at a frequency of 1.3 GHz, a supply voltage of 50 V, an I
100 mA:
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Industrial, scientific and medical applications
Output power = 250 W
Power gain = 15 dB
Efficiency = 50 %
Test information
f
(GHz)
1.3
case
= 25
°
C; I
Dq
V
(V)
50
DS
= 100 mA; in a class-AB production test circuit.
P
(W)
250
L(1dB)
G
(dB)
15
Objective data sheet
p
η
(%)
50
D
Dq
of

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BLF6G13L-250P,112 Summary of contents

Page 1

... BLF6G13L-250P; BLF6G13LS-250P Power LDMOS transistor Rev. 1 — 2 November 2010 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Table 1. Typical RF performance at T Mode of operation CW 1.2 Features and benefits Typical CW performance at a frequency of 1.3 GHz, a supply voltage ...

Page 2

... BLF6G13L-250P BLF6G13LS-250P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged LDMOST ceramic package ...

Page 3

... η D 6.1 Ruggedness in class-AB operation The BLF6G13L-250P and BLF6G13LS-250P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P Thermal characteristics Parameter thermal resistance from junction to case T DC characteristics C; per section unless otherwise specified. ...

Page 4

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 1. Package outline SOT1121A BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P scale D ...

Page 5

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 2. Package outline SOT1121B BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P scale ...

Page 6

... Abbreviations Table 8. Acronym CW LDMOS LDMOST RF VSWR 10. Revision history Table 9. Revision history Document ID BLF6G13L-250P_6G13LS-250P v.1 BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P Abbreviations Description Continuous Wave Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Voltage Standing-Wave Ratio Release date Data sheet status ...

Page 7

... BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 8

... For sales office addresses, please send an email to: BLF6G13L-250P_6G13LS-250P Objective data sheet BLF6G13L-250P; BLF6G13LS-250P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 9

... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 2 November 2010 Document identifier: BLF6G13L-250P_6G13LS-250P ...

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