STL7NM60N STMicroelectronics, STL7NM60N Datasheet - Page 8
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STL7NM60N
Manufacturer Part Number
STL7NM60N
Description
MOSFET N-CH 600V 5.8A POWERFLAT
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STL7NM60N.pdf
(12 pages)
Specifications of STL7NM60N
Input Capacitance (ciss) @ Vds
363pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Power - Max
68W
Mounting Type
Surface Mount
Package / Case
14-PowerFLAT™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-11043-2
Test circuits
3
8/12
Figure 14. Switching times test circuit for
Figure 16. Test circuit for inductive load
Figure 18. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100μH
V
2200
μF
(BR)DSS
3.3
μF
3.3
μF
1000
Doc ID 18348 Rev 1
μF
AM01472v1
AM01468v1
AM01470v1
V
DD
V
DD
V
DD
Figure 15. Gate charge test circuit
Figure 17. Unclamped inductive load test
Figure 19. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
μF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
D.U.T.
V
47kΩ
100Ω
DS
2200
μF
100nF
90%
td
off
t
off
STL7NM60N
3.3
μF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD