STL7NM60N STMicroelectronics, STL7NM60N Datasheet - Page 6

• Manufacturer Part Number: STL7NM60N
• Description: MOSFET N-CH 600V 5.8A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL7NM60N

• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: 14-PowerFLAT™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11043-2

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
0.001
0.01
0.1
(A)
10
I
I
D
D
1
V
(V)
(A)
0.1
12
10
GS
6
5
4
3
2
1
0
6
2
9
8
7
8
4
0
0
0
V
DS
Safe operating area
Output characteristics
Electrical characteristics (curves)
V
Gate charge vs gate-source voltage Figure 7.
GS
2
=10V
1
4
10
6
V
10
DD
8
I
D
20
=480V
=5A
10
12
6V
100
Tj=150°C
Tc=25°C
Single pulse
40
14
AM06479v1
5V
V
16
DS
(V)
Doc ID 18348 Rev 1
V
100µs
AM07211v1
10µs
1ms
10ms
Q
AM06477v1
DS
g
V
(V)
500
400
100
0
300
200
(nC)
DS
(V)
Figure 3.
Figure 5.
(A)
I
D
R
(
DS(on)
Ohm
0.88
0.86
0.84
0.74
0.82
0.76
0.80
0.78
10
0
5
4
3
2
1
9
8
7
6
0
)
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
2
1
V
DS
=20V
4
V
2
GS
=10V
6
3
8
4
10
STL7NM60N
5
I
V
D
AM06480v1
AM06478v1
(A)
GS
(V)