STL7NM60N STMicroelectronics, STL7NM60N Datasheet - Page 4

• Manufacturer Part Number: STL7NM60N
• Description: MOSFET N-CH 600V 5.8A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STL7NM60N

• Input Capacitance (ciss) @ Vds: 363pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Power - Max: 68W
• Mounting Type: Surface Mount
• Package / Case: 14-PowerFLAT™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-11043-2

Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. C
V
Symbol
Symbol
R
C
V
CASE
(BR)DSS
I
I
C
DS(on)
oss eq.
increases from 0 to 80% V
GS(th)
C
C
Q
Q
DSS
GSS
Rg
Q
(1)
oss eq.
oss
rss
iss
gs
gd
g
=25°C unless otherwise specified)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
DS
Dynamic
= 0)
Parameter
Parameter
GS
= 0)
DSS
Doc ID 18348 Rev 1
V
V
V
f=1 MHz Gate DC Bias=0
test signal level = 20 mV
open drain
V
V
(see
I
V
V
V
V
V
D
DS
GS
GS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
=0
= V
= 10 V, I
= 480 V, I
= 50V, f=1 MHz,
=0, V
=10 V
= Max rating,
= Max rating @125 °C
= ± 25 V
Figure
Test conditions
Test conditions
GS
DS
, I
D
15)
D
GS
=0 to 480 V
D
= 2.5 A
= 250 µA
= 0
= 5 A
Min.
600
Min.
2
-
-
-
-
0.805
Typ.
Typ.
24.6
363
130
1.1
5.4
2.7
2.7
14
3
oss
Max.
STL7NM60N
Max.
0.90
100
100
when V
1
4
-
-
-
-
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
nA
Ω
V
V
Ω