IRLHS6342TR2PBF International Rectifier, IRLHS6342TR2PBF Datasheet - Page 8

• Manufacturer Part Number: IRLHS6342TR2PBF
• Description: MOSFET N-CH 30V 8.7A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6342TR2PBF

• Input Capacitance (ciss) @ Vds: 1019pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLHS6342PbF
PQFN 2x2 Outline Tape and Reel
8
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