IRLHS6342TR2PBF International Rectifier, IRLHS6342TR2PBF Datasheet - Page 2

• Manufacturer Part Number: IRLHS6342TR2PBF
• Description: MOSFET N-CH 30V 8.7A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6342TR2PBF

• Input Capacitance (ciss) @ Vds: 1019pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant


‚
ƒ
„
…
†
‡
IRLHS6342PbF
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
Thermal Resistance
R
R
R
R
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
g
gs
gd
rr
θJC
θJC
θJA
θJA
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Package is limited to 12A by die-source to lead-frame bonding technology
GS(th)
DSS
2
θ
DSS
is measured at
(Bottom)
(Top)
/∆T
J
J
= 25°C, L = 0.39mH, R
J
= 25°C (unless otherwise specified)
T
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
J
of approximately 90°C.
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (<10s)
Parameter
Ù
G
Parameter
= 50Ω, I
Parameter
™
AS
f
= 8.5A.
Parameter
f
Time is dominated by parasitic Inductance
Min.
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
30
39
Typ. Max. Units
1019
Typ. Max. Units
12.0
15.0
–––
–––
-4.2
–––
–––
–––
–––
–––
–––
–––
–––
0.5
4.6
2.1
4.9
22
11
13
19
13
97
70
11
13
Typ.
15.5
19.5
-100
12
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.0
1.2
76
17
20
i
mV/°C
mV/°C
mΩ
µA
nA
nC
pF
nC
ns
ns
Ω
V
V
S
A
V
Typ.
–––
–––
–––
–––
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Fig.18
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 300 A/µs
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
J
J
G
= 8.5A (See Fig. 6 & 17)
= 8.5A
=1.8Ω
= 25°C, I
= 25°C, I
= 0V, I
= 4.5V, I
= 2.5V, I
= V
= 24V, V
= 24V, V
= 12V
= -12V
= 10V, I
= 15V
= 4.5V
= 15V, V
= 0V
= 25V
GS
, I
Max.
8.5
D
14
D
S
F
D
= 250µA
D
D
GS
GS
GS
= 10µA
= 8.5A, V
= 8.5A
= 8.5A, V
Conditions
Conditions
= 8.5A
= 8.5A
Max.
= 0V
= 0V, T
= 4.5V
13
90
60
42
eÃ
D
e
e
= 1mA
GS
DD
J
= 125°C
www.irf.com
= 15V
G
= 0V
Units
Units
°C/W
e
mJ
A
D
S