IRLHS6342TR2PBF International Rectifier, IRLHS6342TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRLHS6342TR2PBF
• Description: MOSFET N-CH 30V 8.7A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6342TR2PBF

• Input Capacitance (ciss) @ Vds: 1019pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRLHS6342PbF
Fig 7. Typical Source-Drain Diode Forward Voltage
4
100
1.0
10
20
18
16
14
12
10
8
6
4
2
0
0.4
0.01
25
100
0.1
10
Fig 9. Maximum Drain Current vs.
1E-006
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Case (Bottom) Temperature
0.5
T J = 150°C
V SD , Source-to-Drain Voltage (V)
50
D = 0.50
T C , Case Temperature (°C)
0.6
0.01
0.02
0.20
0.10
0.05
75
0.7
1E-005
Limited By Package
0.8
SINGLE PULSE
( THERMAL RESPONSE )
100
T J = 25°C
0.9
V GS = 0V
125
1.0
0.0001
t 1 , Rectangular Pulse Duration (sec)
150
1.1
0.001
1000
Fig 10. Threshold Voltage vs. Temperature
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
1
-75 -50 -25
0.01
0
Fig 8. Maximum Safe Operating Area
Tc = 25°C
Tj = 150°C
Single Pulse
Limited by
Wire Bond
ID = 10µA
I D = 25µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
V DS , Drain-to-Source Voltage (V)
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
0
0.1
25
DC
10msec
1msec
50
100µsec
10
75 100 125 150
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1
100