IRLHS6342TR2PBF International Rectifier, IRLHS6342TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRLHS6342TR2PBF
• Description: MOSFET N-CH 30V 8.7A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLHS6342TR2PBF

• Input Capacitance (ciss) @ Vds: 1019pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.5 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 1.1V @ 10µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 2.1W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 19 A
• Power Dissipation: 2.1 W
• Gate Charge Qg: 11 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current
60
50
40
30
20
10
30
25
20
15
10
Fig 12. On-Resistance vs. Gate Voltage

0
5
25
0
‚
+
-
Starting T J , Junction Temperature (°C)
V GS, Gate -to -Source Voltage (V)
2
50
4
ƒ
75
T J = 25°C
+
-
•
•
•
•
6
Fig 16.
SD
T J = 125°C
8
100
•
•
•
TOP
BOTTOM 8.5A
10
-
G
125
I D = 8.5A
„
I D
1.9A
3.4A
12
HEXFET
+
150
14
®
+
-
Power MOSFETs
Re-Applied
Voltage
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 13. Typical On-Resistance vs. Drain Current
600
500
400
300
200
100
30
28
26
24
22
20
18
16
14
12
10
0
1E-5
P.W.
SD
DS
5
Waveform
Waveform
Fig 15. Typical Power vs. Time
Ripple ≤ 5%
Body Diode
15
Period
for N-Channel
1E-4
Body Diode Forward
Vgs = 2.5V
Diode Recovery
25
Current
I D , Drain Current (A)
dv/dt
Forward Drop
1E-3
IRLHS6342PbF
Time (sec)
di/dt
35
D =
1E-2
45
Period
P.W.
Vgs = 4.5V
55
1E-1
V
V
I
SD
65
GS
DD
=10V
1E+0
75
5