BUK661R6-30C,118 NXP Semiconductors, BUK661R6-30C,118 Datasheet - Page 8

• Manufacturer Part Number: BUK661R6-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R6-30C,118

• Input Capacitance (ciss) @ Vds: 14964pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 229nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK661R6-30C
Product data sheet
Fig 9.
Fig 11. Normalized drain-source on-state resistance
(A)
I
D
10
10
10
10
10
10
a
1.5
0.5
-1
-2
-3
-4
-5
-6
2
1
0
−60
gate-source voltage
factor as a function of junction temperature
Sub-threshold drain current as a function of
0
0
1
min
60
2
typ
max
120
3
All information provided in this document is subject to legal disclaimers.
003aad806
V
T
GS
j
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(V)
Rev. 01 — 6 September 2010
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4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Gate charge waveform definitions
V
GS(th)
(V)
N-channel TrenchMOS intermediate level FET
4
3
2
1
0
-60
junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
BUK661R6-30C
max @1mA
min @2.5mA
Q
typ @1mA
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
003aae542
T
j
(°C)
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