BUK661R6-30C,118 NXP Semiconductors, BUK661R6-30C,118 Datasheet - Page 7

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BUK661R6-30C,118

Manufacturer Part Number
BUK661R6-30C,118
Description
MOSFET N-CH TRENCH D2PACK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK661R6-30C,118

Input Capacitance (ciss) @ Vds
14964pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
229nC @ 10V
Power - Max
306W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
NXP Semiconductors
Table 6.
BUK661R6-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
D
fs
250
200
150
100
100
50
80
60
40
20
0
0
function of drain-source voltage; typical values
drain current; typical values
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
10
0.25
4.5
25
…continued
4
0.5
50
V
GS
0.75
75
(V) = 3.8
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
003a a e 235
003a a e 237
DS
V
I
= 25 A; V
= 20 A; dI
D
DS
(A)
Figure 15
= 25 V
3.6
3.4
3.3
3.2
(V)
Rev. 01 — 6 September 2010
100
1
GS
S
/dt = -100 A/µs; V
= 0 V; T
Fig 6.
Fig 8.
j
= 25 °C;
R
(mΩ)
DSon
(A)
I
D
N-channel TrenchMOS intermediate level FET
30
20
10
16
12
0
8
4
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
= 0 V;
T
j
4
= 175 °C
2
BUK661R6-30C
Min
-
-
-
8
T
j
= 25 °C
4
Typ
0.8
70
0.138
12
© NXP B.V. 2010. All rights reserved.
V
003a a e 236
003a a e 240
GS
V
GS
(V)
Max
1.2
-
-
(V)
16
6
Unit
V
ns
nC
7 of 15

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