BUK661R6-30C,118 NXP Semiconductors, BUK661R6-30C,118 Datasheet - Page 4

• Manufacturer Part Number: BUK661R6-30C,118
• Description: MOSFET N-CH TRENCH D2PACK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK661R6-30C,118

• Input Capacitance (ciss) @ Vds: 14964pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 229nC @ 10V
• Power - Max: 306W
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK661R6-30C
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
(A)
I
10
D
10
10
10
300
250
200
150
100
10
−1
50
1
4
3
2
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
50
(1)
Limit R
100
DSon
= V
150
DS
/I
All information provided in this document is subject to legal disclaimers.
T
D
003aae232
mb
1
(°C)
Rev. 01 — 6 September 2010
200
Fig 2.
P
DC
(%)
der
120
N-channel TrenchMOS intermediate level FET
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
50
BUK661R6-30C
100
V
DS
t
100 μs
1 ms
10 ms
100 ms
(V)
p
= 10 μs
150
© NXP B.V. 2010. All rights reserved.
T
mb
001aal522
03na19
(°C)
200
10
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