BUK654R6-55C,127 NXP Semiconductors, BUK654R6-55C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK654R6-55C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK654R6-55C,127

• Input Capacitance (ciss) @ Vds: 7750pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Power - Max: 204W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.6 mOhms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 204 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK654R6-55C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
g
(A)
I
fs
160
120
D
160
120
80
40
80
40
0
0
drain current; typical values
function of gate-source voltage; typical values
T
Forward transconductance as a function of
V
Transfer characteristics: drain current as a
0
0
j
DS
Characteristics
= 25°C; V
= 25 V
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
20
DS
T
j
= 25 V
= 175 °C
2
…continued
40
3
T
60
j
= 25 °C
All information provided in this document is subject to legal disclaimers.
4
003aae708
003aae710
I
V
D
GS
(A)
(V)
Rev. 02 — 14 October 2010
Conditions
I
see
I
V
80
S
S
5
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
/dt = -100 A/µs;
Fig 6.
Fig 8.
= 0 V; T
= 25 V
R
(m Ω )
DSon
(A)
I
D
200
160
120
N-channel TrenchMOS intermediate level FET
80
40
20
16
12
8
4
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
j
T
Output characteristics: drain current as a
T
Drain-source on-state resistance as a function
0
0
= 25 °C;
j
j
= 25°C; t
= 25°C; I
2
0.5
V
p
D
GS
= 300 μs
25 A
(V) = 10 6
BUK654R6-55C
4
Min
-
-
-
1
6
5
Typ
0.83
55
112
1.5
© NXP B.V. 2010. All rights reserved.
8
V
003aae709
003aae711
V
DS
GS
Max
1.2
-
-
(V)
3.4
4.5
3.8
3.6
4
(V)
10
2
Unit
V
ns
nC
7 of 14