PSMN035-100LS,115 NXP Semiconductors, PSMN035-100LS,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN035-100LS,115
• Description: MOSFET N-CH QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS,115

• Input Capacitance (ciss) @ Vds: 1350pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 32 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 23nC @ 10V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 27 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5585-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN035-100LS
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
R
temperature. In practice R
(A)
I
D
th(j-a)
10
10
10
10
10
10
10
10
−1
−2
−1
−2
1
3
2
1
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
1
−6
Thermal characteristics
single shot
0.1
0.05
δ = 0.5
0.02
0.2
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Limit R
DSon
10
th(j-a)
−5
= V
will be determined by the customer’s PCB characteristics
DS
/ I
D
All information provided in this document is subject to legal disclaimers.
10
10
−4
DC
Rev. 2 — 18 August 2010
N-channel QFN3333 100 V 32mΩ standard level MOSFET
10
−3
Conditions
see
Figure 4
10
10
−2
2
100 ms
100 μs
10 ms
1 ms
t
p
= 10 μs
[1]
PSMN035-100LS
Min
-
-
V
10
P
DS
−1
(V)
t
Typ
1
53
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003a a e 353
003aae141
δ =
Max
1.3
60
t
T
p
t
10
1
3
Unit
K/W
K/W
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