PSMN035-100LS,115 NXP Semiconductors, PSMN035-100LS,115 Datasheet - Page 11
PSMN035-100LS,115
Manufacturer Part Number
PSMN035-100LS,115
Description
MOSFET N-CH QFN3333
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN035-100LS115.pdf
(14 pages)
Specifications of PSMN035-100LS,115
Input Capacitance (ciss) @ Vds
1350pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
32 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
23nC @ 10V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
29 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
27 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5585-2
NXP Semiconductors
8. Revision history
Table 7.
PSMN035-100LS
Product data sheet
Document ID
PSMN035-100LS v.2
Modifications:
PSMN035-100LS v.1
Revision history
20100818
20100517
Release date
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Objective data sheet
Rev. 2 — 18 August 2010
N-channel QFN3333 100 V 32mΩ standard level MOSFET
Change notice
-
-
PSMN035-100LS
Supersedes
PSMN035-100LS v.1
-
© NXP B.V. 2010. All rights reserved.
11 of 14