PSMN011-80YS,115 NXP Semiconductors, PSMN011-80YS,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN011-80YS,115
• Description: MOSFET N-CH 80V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS,115

• Input Capacitance (ciss) @ Vds: 2800pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 117 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5577-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN011-80YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
10
10
10
−1
−2
−3
1
1
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
−6
Thermal characteristics
0.02
0.05
δ = 0.5
0.2
0.1
single shot
Parameter
thermal resistance from junction to
mounting base
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 02 — 28 October 2010
10
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
Conditions
see
−3
Figure 4
10
−2
PSMN011-80YS
Min
-
10
−1
Typ
0.5
t
p (s)
© NXP B.V. 2010. All rights reserved.
003a a d342
Max
1.3
1
Unit
K/W
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