PSMN011-80YS,115 NXP Semiconductors, PSMN011-80YS,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN011-80YS,115
• Description: MOSFET N-CH 80V LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN011-80YS,115

• Input Capacitance (ciss) @ Vds: 2800pF @ 40V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 117 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5577-2

NXP Semiconductors
PSMN011-80YS
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
100
80
60
40
20
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
0.3
T
j
= 175 °C
N-channel LFPAK 80 V 11 mΩ standard level MOSFET
0.6
0.9
T
j
= 25 °C
003aad334
V
SD
(V)
1.2
PSMN011-80YS
© NXP B.V. 2010. All rights reserved.
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