BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet - Page 7

• Manufacturer Part Number: BUK6510-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6510-75C,127

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
Table 6.
BUK6510-75C
Product data sheet
Symbol
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 5.
D
S
SD
iss
oss
rss
GS
GD
r
(A)
I
D
150
125
100
75
50
25
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
Characteristics
Parameter
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
V
GS
1
(V) =10
6.0
…continued
5.0
2
4.5
3
All information provided in this document is subject to legal disclaimers.
V
003aae409
DS
(V)
4.0
3.6
3.4
3.3
3.2
3.8
Rev. 02 — 13 December 2010
Conditions
I
see
V
T
V
R
from drain lead 6 mm from package
to centre of die ; T
from source lead to source bond
pad ; T
I
see
I
V
4
D
S
S
j
GS
DS
GS
G(ext)
= 25 A; V
= 25 °C; see
= 25 A; V
= 20 A; dI
Figure
Figure 19
= 0 V; V
= 55 V; R
= 0 V; V
= 10 Ω
j
= 25 °C
16; see
GS
DS
S
DS
DS
/dt = -100 A/µs;
Fig 6.
L
= 60 V; V
= 0 V; T
Figure 20
= 2.2 Ω; V
= 25 V; f = 1 MHz;
= 25 V
(mΩ)
R
j
DSon
= 25 °C
Figure 17
50
40
30
20
10
0
of gate-source voltage; typical values.
Drain-source on-state resistance as a function
j
0
= 25 °C;
GS
GS
= 10 V;
= 10 V;
4
8
BUK6510-75C
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N-channel TrenchMOS FET
12
Typ
11
30
3938
310
206
18
40
165
80
4.5
7.5
0.8
50.5
105
© NXP B.V. 2010. All rights reserved.
16
003aae415
V
GS
372
282
-
Max
-
-
5251
-
-
-
-
-
1.2
-
-
(V)
20
Unit
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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