BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet - Page 10

• Manufacturer Part Number: BUK6510-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6510-75C,127

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
BUK6510-75C
Product data sheet
Fig 15. Normalized drain-source on-state resistance
Fig 17. Gate charge waveform definitions
a
2.5
1.5
0.5
3
2
1
0
-60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
All information provided in this document is subject to legal disclaimers.
003aaa508
003aad804
T
j
(°C)
Rev. 02 — 13 December 2010
180
Fig 16. Gate-source voltage as a function of gate
Fig 18. Gate-source voltage as a function of gate
V
(V)
GS
V
10
(V)
10
GS
8
6
4
2
0
8
6
4
2
0
charge; typical values
charge; typical values
0
0
V
20
DS
10
= 6V
15V
14V
40
BUK6510-75C
N-channel TrenchMOS FET
20
60
V
DS
24V
= 60V
30
© NXP B.V. 2010. All rights reserved.
80
Q
003aaf019
003aae414
Q
G
G
(nC)
(nC)
100
40
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