BUK6510-75C,127 NXP Semiconductors, BUK6510-75C,127 Datasheet - Page 2

• Manufacturer Part Number: BUK6510-75C,127
• Description: MOSFET N-CH TRENCH SOT78A
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK6510-75C,127

• Input Capacitance (ciss) @ Vds: 5251pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10.4 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 77A
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Gate Charge (qg) @ Vgs: 81nC @ 10V
• Power - Max: 158W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 77 A
• Power Dissipation: 158 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free by exemption / RoHS compliant by exemption

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK6510-75C
Product data sheet
Pin
1
2
3
mb
Type number
BUK6510-75C
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Package
Name
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 13 December 2010
Simplified outline
SOT78A (TO-220AB)
1 2
mb
3
Graphic symbol
BUK6510-75C
N-channel TrenchMOS FET
mbb076
G
© NXP B.V. 2010. All rights reserved.
Version
SOT78A
D
S
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