PSMN016-100YS,115 NXP Semiconductors, PSMN016-100YS,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN016-100YS,115
• Description: MOSFET N-CH LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100YS,115

• Input Capacitance (ciss) @ Vds: 2744pF @ 50V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16.3 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 51A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Power - Max: 117W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 29.3 mOhms
• Drain-source Breakdown Voltage: 90 V
• Continuous Drain Current: 36 A
• Power Dissipation: 117 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5579-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN016-100YS_3
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
Thermal characteristics
δ = 0.5
0.1
0.05
0.02
single shot
0.2
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 03 — 30 March 2010
N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK
Conditions
see
10
Figure 4
-3
10
-2
PSMN016-100YS
Min
-
10
P
-1
Typ
0.54
t
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003aad882
δ =
Max
1.28
t
T
p
t
1
Unit
K/W
5 of 15