PSMN3R5-30LL,115 NXP Semiconductors, PSMN3R5-30LL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN3R5-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R5-30LL,115

• Input Capacitance (ciss) @ Vds: 2061pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 71 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5591-2

NXP Semiconductors
PSMN3R5-30LL
Product data sheet
Fig 11. Sub-threshold drain current as a function of
Fig 13. Drain-source on-state resistance as a function
R
(mΩ)
DSon
10
10
10
10
10
10
(A)
I
D
20
15
10
-1
-2
-3
-4
-5
-6
5
0
gate-source voltage
of drain current; typical values
0
0
10
min
1
20
typ
2
V
GS
30
V
(V) = 3
All information provided in this document is subject to legal disclaimers.
003a a e 147
GS
003aab271
I
max
10
D
4.5
3.5
(V)
(A)
40
Rev. 3 — 18 August 2010
3
N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET
Fig 12. Normalized drain-source on-state resistance
Fig 14. Gate charge waveform definitions
a
1.5
0.5
2
1
0
−60
factor as a function of junction temperature
V
V
V
V
GS(pl)
DS
GS(th)
GS
Q
0
GS1
I
Q
D
PSMN3R5-30LL
GS
Q
GS2
60
Q
G(tot)
Q
GD
120
© NXP B.V. 2010. All rights reserved.
003aaa508
T
j
( ° C)
03aa27
180
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