PSMN3R5-30LL,115 NXP Semiconductors, PSMN3R5-30LL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN3R5-30LL,115
• Description: MOSFET N-CH 30V QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN3R5-30LL,115

• Input Capacitance (ciss) @ Vds: 2061pF @ 15V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Power - Max: 71W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 71 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5591-2

NXP Semiconductors
5. Thermal characteristics
Table 5.
[1]
PSMN3R5-30LL
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
R
temperature. In practice R
(A)
I
D
th(j-a)
10
10
10
10
10
10
10
10
−1
−2
−1
−2
1
3
2
1
10
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
−1
−6
Thermal characteristics
single shot
0.1
0.05
δ = 0.5
0.02
0.2
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Limit R
10
th(j-a)
−5
DSon
will be determined by the customer’s PCB characteristics
= V
DS
/ I
All information provided in this document is subject to legal disclaimers.
D
10
1
−4
Rev. 3 — 18 August 2010
10
N-channel QFN3333 30 V 3.6 mΩ logic level MOSFET
−3
DC
Conditions
see
Figure 4
10
10
−2
[1]
PSMN3R5-30LL
Min
-
-
10
P
V
DS
−1
100 ms
100 μs
1 ms
10 ms
t p = 10 μs
(V)
t
Typ
1
53
p
T
t
p
© NXP B.V. 2010. All rights reserved.
(s)
003a a e 140
003aae141
δ =
Max
1.3
60
t
T
p
t
10
1
2
Unit
K/W
K/W
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