PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet - Page 5
![MOSFET N-CH LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PSMN039-100YS,115
Manufacturer Part Number
PSMN039-100YS,115
Description
MOSFET N-CH LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN039-100YS115.pdf
(15 pages)
Specifications of PSMN039-100YS,115
Input Capacitance (ciss) @ Vds
1847pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
28.1A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
23nC @ 10V
Power - Max
74W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
71 mOhms
Drain-source Breakdown Voltage
90 V
Continuous Drain Current
20 A
Power Dissipation
74 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5586-2
NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN039-100YS_2
Product data sheet
Symbol
R
Z
Fig 4.
th(j-mb)
th
(K/W)
10
10
10
-1
-2
-3
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
Thermal characteristics
-6
Parameter
thermal resistance from
junction to mounting
base
0.05
0.02
single shot
δ = 0.5
0.2
0.1
10
-5
Conditions
see
Figure 4
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 2 April 2010
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
10
-3
10
-2
PSMN039-100YS
Min
-
10
P
-1
Typ
1
t
p
T
© NXP B.V. 2010. All rights reserved.
t
p
(s)
003aae093
δ =
Max
2.03
t
T
p
t
1
Unit
K/W
5 of 15