PSMN039-100YS,115 NXP Semiconductors, PSMN039-100YS,115 Datasheet - Page 10
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PSMN039-100YS,115
Manufacturer Part Number
PSMN039-100YS,115
Description
MOSFET N-CH LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN039-100YS115.pdf
(15 pages)
Specifications of PSMN039-100YS,115
Input Capacitance (ciss) @ Vds
1847pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
28.1A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
23nC @ 10V
Power - Max
74W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
71 mOhms
Drain-source Breakdown Voltage
90 V
Continuous Drain Current
20 A
Power Dissipation
74 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5586-2
NXP Semiconductors
PSMN039-100YS_2
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
25
20
15
10
5
0
0
All information provided in this document is subject to legal disclaimers.
0.25
Rev. 02 — 2 April 2010
T
j
= 175 ° C
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
0.5
0.75
T
003aae102
j
V
= 25 ° C
SD
(V)
1
PSMN039-100YS
© NXP B.V. 2010. All rights reserved.
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