PSMN030-60YS,115 NXP Semiconductors, PSMN030-60YS,115 Datasheet - Page 12
PSMN030-60YS,115
Manufacturer Part Number
PSMN030-60YS,115
Description
MOSFET N-CH LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN030-60YS115.pdf
(15 pages)
Specifications of PSMN030-60YS,115
Input Capacitance (ciss) @ Vds
686pF @ 30V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
24.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
13nC @ 10V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
49.6 mOhms
Drain-source Breakdown Voltage
54 V
Continuous Drain Current
21 A
Power Dissipation
56 W
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-5584-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN030-60YS,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
8. Revision history
Table 7.
PSMN030-60YS
Product data sheet
Document ID
PSMN030-60YS v.2
Modifications:
PSMN030-60YS v.1
Revision history
20100211
Release date
20101025
•
•
Status changed from objective to product.
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
Data sheet status
Product data sheet
Objective data sheet
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Change notice
-
-
PSMN030-60YS
Supersedes
PSMN030-60YS v.1
-
© NXP B.V. 2010. All rights reserved.
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