1ED020I12-F Infineon Technologies, 1ED020I12-F Datasheet - Page 15

• Manufacturer Part Number: 1ED020I12-F
• Description: MOSFET & Power Driver ICs SNGL IGBT Driver IC IGBT Driver IC
• Manufacturer: Infineon Technologies

Specifications of 1ED020I12-F

• Product: Driver ICs - Various
• Rise Time: 400 ns
• Fall Time: 600 ns
• Supply Voltage (max): 5.5 V, 20 V, 0 V
• Supply Voltage (min): 4.5 V, 13 V, - 12 V
• Maximum Power Dissipation: 700 mW
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Number Of Outputs: 1
• Package / Case: PG-DSO-16-15
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.4.7
Parameter
Blanking Capacitor Charge Current
Blanking Capacitor Discharge Current
Desaturation Reference Level
Desaturation Reference Level
Desaturation Sense to OUT Low Delay
Desaturation Sense to FLT Low Delay
Desaturation Low Voltage
4.4.8
Parameter
Active Shut Down Voltage
1)
Datasheet
With reference to VEE2
Desaturation protection
Active Shut Down
Symbol
I
I
V
V
T
T
V
Symbol
V
DESATC
DESATD
DESATOUT
DESATFLT
DESAT
DESAT
DESATL
ACTSD
1)
Limit Values
min.
Limit Values
min.
215
8.3
7.6
0.4
—
—
1
15
typ.
typ.
250
100
8.6
0.6
—
2
9
max.
max.
2.25
0.95
295
150
9.5
9.5
—
4
Unit Test Conditions
Unit Test Conditions
mA V
uA V
ns
us
V
V
V
V
V
V
V
V
V
C
V
IN+=Low, IN-=Low,
OUT=Low
I
V
OUT
Version 2.2, 2009-12-03
LOAD
VCC2
DESAT
VCC2
DESAT
VCC2
VCC2
OUT
FLT
CC2
Electrical Parameters
EICEDRIVER
=-200mA,
=10%; I
open
=90%
= 1nF
=15V,V
=15V,V
=15V,V
=15V,V
=2V
=6V
1ED020I12-F
FLT
VEE2
VEE2
VEE2
VEE2
=5mA
=-8V
=-8V
=-8V
=0V
TM